| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device in which wiring having high uniformity of thickness can be formed in a process for forming wiring using dual damascene technology. SOLUTION: After a patterned insulation film 11 is formed on a semiconductor wafer, a Cu film 13 is formed on the insulation film 11 and a wiring forming part 12, i.e., a part where the insulation film 11 is not formed. The Cu film 13 is then polished mechanically using a grinder where abrasive particles of specified hardness are bonded on its surface until a level difference generated on the surface of the Cu film 13 due to wiring layout is eliminated. Thereafter, the Cu film 13 on the insulation film 11 is polished using a chemical mechanical polishing method thus forming wiring formed of the Cu film 13 in the wiring forming part 12.
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