| 摘要 |
PURPOSE: To provide a semiconductor package superior in a high frequency characteristic, in which a capacitor can easily be loaded on a substrate, the fluctuation of power voltage is suppressed, wiring length connecting the capacitor and a connection terminal is made the shortest and inductance is dropped. CONSTITUTION: In the semiconductor package where the capacitor 30 suppressing the fluctuation of power voltage is loaded, a conductor wire 32 connected to the connection terminal 10a of a semiconductor element 10 on one end side, a high dielectric material 34 coated with the conductor wire 32 by prescribed thickness, and a conductive layer 36 arranged between the outer peripheral face of the high dielectric material 34 and the inner wall face of an installation hole are formed in coaxial structure, where the conductor wire 32 is made to be a core wire in the capacitor 30 are they are loaded in the installation hole passing through the substrate 22 in a thickness direction. |
