| 摘要 |
<p>PROBLEM TO BE SOLVED: To facilitate the troublesome manufacture of an element employing the diamond thin film having a thickness of 10μm or less. SOLUTION: The diamond thin film 101 is formed on a silicon substrate 102 by a vapor synthesizing method so as to have a thickness of the degree of 5μm. Then, paraffin 104 is applied and, thereafter, the substrate 102 is removed by hydrofluoric acid or the like. The diamond thin film 101 is retained while having the substrate of the paraffin 104. Thereafter, a necessary circuit if formed on the surface of the diamond thin film and, finally, the paraffin 104 is removed whereby the element employing the diamond thin film 101 is completed. Such a constitution can be utilized for the manufacture of the element for measuring a thermal affection employing the diamond thin film or a flow are measuring element, for example.</p> |
