| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based FET that can obtain a superior power characteristic and, at the same time, can be reduced in cost by simplifying its manufacturing process, and to provide a method of manufacturing the FET. SOLUTION: In the GaN-based FET, an n-type GaN electron traveling layer 14 and an Al0.2 Ga0.8 N electron supply layer 16 are formed on a sapphire substrate 10 having a thickness of about 50 nm, and n<+> -type GaN contact regions 24a and 24b are formed on both sides of the layers 14 and 16. Through a contact hole made through an extensively formed polyimide interlayer insulating film 28 having a thickness of about 3,000 nm, a source electrode 32a and a drain electrode 32b, both of which are composed of TaSi/Au layers are ohmic- connected to the contact regions 24a and 24b, and a gate electrode 32c also composed of a TaSi/Au layer is brought into contact with an SiO2 gate insulating film 26. These electrodes 32a, 32b, and 32c have thicknesses of about 5,000 nm which are larger than that of the insulating film 28.
|
