| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of depositing silicon nitride which can reduce the contamination of wafer with Al from a stage formed of an Al-group material. SOLUTION: First, a process for cleaning a silicon nitride film deposited on the internal wall of a chamber and a stage is performed (S201). Next, a process for covering the stage with the SiO2 film is performed (S202). In this process, SiH4 gas and N2 O gas are used and the stage is covered with the SiO2 film (S203). Subsequently, the wafer is carried into the chamber and then placed on the stage (S204). Thereafter, a process for depositing the silicon nitride film on the wafer is performed. In this process, N2 gas and the SiH4 gas are used. Moreover, a stage temperature is kept at 550 deg.C. Accordingly, the silicon nitride film is formed on the wafer. Finally, the wafer is carried out from the inside of the chamber 21a (S205).
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