| 摘要 |
PURPOSE: A method for forming a thin film is provided to be capable of forming the thin film at low temperature, though the reactivity of a source gas is in decreased state, by activating the source gas using high frequency power. CONSTITUTION: A purge gas(100) is continuously supplied in a reaction chamber during a gas supply cycle(T1cycle). The first material gas(102) is supplied in the reaction chamber, so that the first material gas(102) is adsorbed on a substrate. After stopping the supply of the first material gas(102), the remaining first material gas is exhausted to the outside of the reaction chamber by the purge gas(100). The second material gas(104) is then supplied in the reaction chamber, wherein the second material gas(104) is inactive. Plasma is generated in the reaction chamber by supplying high frequency power(140) during the supply of the second material gas(104), so that the second material gas(104) becomes active. At this time, a thin film is formed on the substrate by reacting between the ions of the second material gas(104) and the adsorbed first material gas.
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