发明名称 METHOD OF ELIMINATING VOIDS IN W PLUGS
摘要 Reliable contacts/vias are formed by filling an opening in a dielectric layer (200) with W (202) and laser thermal annealing (30) to eliminate or significantly reduce voids (203). Embodiments include depositing W (202) to fill a contact/via opening in an interlayer dielectric (200), laser thermal annealing (30) in N2 to elevate the temperature of the W filling the contact/via opening and reflow the W thereby eliminating voids (203). Embodiments include conducting CMP either before or subsequent to laser thermal annealing.
申请公布号 WO03040436(A1) 申请公布日期 2003.05.15
申请号 WO2002US35910 申请日期 2002.11.08
申请人 ADVANCED MICRO DEVICES, INC. 发明人 NGO, MINH, VAN;PATON, ERIC
分类号 C25D5/50;H01L21/768;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):C25D5/50;H01L21/20;H01L23/522 主分类号 C25D5/50
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