发明名称 |
METHOD OF ELIMINATING VOIDS IN W PLUGS |
摘要 |
Reliable contacts/vias are formed by filling an opening in a dielectric layer (200) with W (202) and laser thermal annealing (30) to eliminate or significantly reduce voids (203). Embodiments include depositing W (202) to fill a contact/via opening in an interlayer dielectric (200), laser thermal annealing (30) in N2 to elevate the temperature of the W filling the contact/via opening and reflow the W thereby eliminating voids (203). Embodiments include conducting CMP either before or subsequent to laser thermal annealing.
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申请公布号 |
WO03040436(A1) |
申请公布日期 |
2003.05.15 |
申请号 |
WO2002US35910 |
申请日期 |
2002.11.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO, MINH, VAN;PATON, ERIC |
分类号 |
C25D5/50;H01L21/768;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):C25D5/50;H01L21/20;H01L23/522 |
主分类号 |
C25D5/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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