| 摘要 |
In a semiconductor laser element, a lower cladding layer of a first conductive type, a lower optical waveguide layer of the first conductive type or an undoped type, a lower GaAs layer, a compressive-strain quantum well active layer, and an upper GaAs layer are formed on a GaAs substrate of the first conductive type. The upper GaAs layer, the active layer, and the lower GaAs layer are partially removed in a vicinity of end facets of a resonator, and the space of the vicinity of end facets is filled with an upper optical waveguide layer of a second conductive type or an undoped type, an upper cladding layer of the second conductive type, and a GaAs contact layer of the second conductive type. Thus a window structure is formed in the vicinity of the end facets.
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