| 摘要 |
A plasma processing apparatus and a method for improving plasma characteristics by controlling the dissociation and ionization in the plasma are described. The method includes providing a flow of precursor gas into a process chamber, and evacuating excess gas from process chamber, disposing a substrate material on a substrate holder in the process chamber, forming a plasma from the precursor gas in a plasma volume within the process chamber and attenuating the plasma in a space surrounding the substrate with a baffle assembly and the substrate holder. The walls of the baffle assembly surround the outside edges and a portion of a surface of the substrate holder opposed to a surface on which the substrate is disposed.
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