| 发明名称 |
Lightly-insitu-doped amorphous silicon applied in DRAM gates |
| 摘要 |
The present invention forms a polysilicon by first forming then thermally processing a lightly in-situ doped amorphous silicon layer, thus suppressing boron penetration and lateral diffusion of N-type and P-type impurities.
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| 申请公布号 |
US2003092249(A1) |
申请公布日期 |
2003.05.15 |
| 申请号 |
US20010986741 |
申请日期 |
2001.11.09 |
| 申请人 |
HSU CHIA-FU;CHENG CHIN-CHENG |
发明人 |
HSU CHIA-FU;CHENG CHIN-CHENG |
| 分类号 |
H01L21/8238;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/8238 |
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