| 摘要 |
<p>Reliable Cu interconnects are formed by filling an opening in a dielectric layer (23, 25) with Cu (27) and then laser thermal annealing (29), in NH3 to reduce copper oxide and to reflow the deposited Cu, thereby eliminating voids (28) and reducing contact resistance. Embodiments include laser thermal annealing (29) employing an NH3 flow rate of about 200 to about 2,000 sccn.</p> |
