发明名称 Method of manufacturing semiconductor device
摘要 A method of manufacturing a semiconductor device includes the steps of, (1) preparing a conductive substrate having a main surface and a back surface opposite to the main surface, (2) forming at the main surface of the conductive substrate a plurality of first grooves, which are parallel to each other, and forming at the main surface of the conductive substrate a plurality of second grooves, which are parallel to each other, and which are perpendicular to the first grooves, (3) fixing a semiconductor chip to the main surface of the conductive substrate, (4) encapsulating the semiconductor chip with resin by introducing the resin onto the main surface of the conductive substrate, the resin entering into the first and the second grooves and (5) polishing the back surface of the conductive substrate until the resin formed in the first and the second grooves are exposed.
申请公布号 US2003092253(A1) 申请公布日期 2003.05.15
申请号 US20020291537 申请日期 2002.11.12
申请人 YAMAGUCHI TADASHI 发明人 YAMAGUCHI TADASHI
分类号 H01L21/56;H01L23/31;H01L23/495;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/56
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