发明名称 |
HIGH FREQUENCY SIGNAL ISOLATION IN A SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device (20) includes an isolated p-well (22) formed in a substrate (21) by a buried n-well (25) and an n-well ring (24). The n-well ring (24) extends from a surface of the semiconductor device (20) to the buried n-well (25). The isolated p-well (22) includes a plurality of n-well plugs (27) extending from the surface of the semiconductor device (20) into the isolated p-well (22) and contacting the buried n-well (25). The plurality of n-well plugs (27) reduces an n-well resistance to provide better noise isolation for high frequency signals. |
申请公布号 |
WO03041161(A2) |
申请公布日期 |
2003.05.15 |
申请号 |
WO2002US32346 |
申请日期 |
2002.10.10 |
申请人 |
MOTOROLA INC. |
发明人 |
DU, YANG,;BANERJEE, SUMAN, KUMAR;THOMA, RAINER;DUVALLET, ALAIN |
分类号 |
H01L21/761;H01L21/822;H01L21/8238;H01L27/04;H01L27/08 |
主分类号 |
H01L21/761 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|