Production of an electronic semiconductor component, comprises placing and joining together insulating layers, applying semiconductor chip to uppermost layer, joining contact surfaces, and encapsulating chip and uppermost layer

摘要

Production of an electronic semiconductor component, comprises placing and joining together insulating layers, applying a semiconductor chip to the uppermost layer, joining the contact surfaces, and encapsulating the chip and uppermost layer. Production of an electronic semiconductor component having a three dimensional wiring structure comprises: (a) placing and joining together insulating layers having passages in the form of conducting structures; (b) applying a semiconductor chip to the uppermost layer; (c) joining the contact surfaces using contact connecting surfaces of the wiring structure; and (d) encapsulating the semiconductor chip and uppermost insulating layer. An Independent claim is also included for the electronic semiconductor component produced by the above process. Preferably the lowermost insulating layer is applied on and joined to the upper surface (41) of a metallic substrate (4). After encapsulation, the substrate is removed from the lowermost insulating layer. The passages are filled with a metallic wiring structure using a galvanic method. The insulating layers are made from polyimide layers and/or films. The wiring structure is made from Ni, Ag and/or Cu.