发明名称 IMAGE SENSOR AND ITS MANUFACTURING METHOD
摘要 <p>An image sensor (10) having a CdTe plate (13), Hall electrodes (12) formed at predetermined intervals in the thickness direction of the CdTe plate (13), and a voltage supply unit for supplying voltage to each of the Hall electrodes (12) by using unadjacent Hall electrodes (12) as anodes, and Hall electrodes adjacent to the anodes as cathodes. The sensing face of the sensor has an array of sensor elements arranged in a matrix and each comprising an anode, cathodes, CdTe present between the anodes and cathodes.</p>
申请公布号 WO2003041175(P1) 申请公布日期 2003.05.15
申请号 JP2002011524 申请日期 2002.11.05
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