| 摘要 |
<p>An agent for forming a coating for narrowing a pattern which is applied on a substrate having a photoresist pattern and narrows the spacings among respective photoresist patterns by the thermal shrinkage thereof, to thereby form a finer pattern, characterized in that it comprises a water-soluble polymer and a surfactant; and a method for forming a fine pattern using the agent for forming the coating. The agent for forming a coating for narrowing a pattern allows the formation of a fine pattern which is excellent in controllability for its pattern dimension, exhibits a good profile, and complies with the requirements for characteristics in a semiconductor device.</p> |
