| 摘要 |
A novel non-volatile memory is disclosed. The non-volatile memory including an array of data storage cells that individually include a storage element (43) such as a floating gate, a control gate and first and second source/drain terminals. A current source (61) provides a current to the first source/drain terminal of the data storage element. A node (75) is electrically connected to the second source/drain terminal of the data storage element. A bias circuit (73, 69) provides a bias voltage to the node. The bias voltage varies with temperature in a manner approximately inverse to the thermal variation of the threshold voltage of the data storage element. A control gate voltage circuit provides a voltage level to the control gate of the data storage cell.
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