MOS DEVICE HAVING A TRENCH GATE ELECTRODE

摘要

An improved low-voltage MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery characteristics comprises a semiconductor substrate (101) on which is disposed a doped upper layer (102) of a first coduction type. The upper layer includes a doped first well region (107) of the first conduction type and a doped well region (106) of the second conduction type underlying the first well region. The upper layer further includes at its upper surface a heavily doped source region (112) of the first conduction type and a heavily doped body region (111) of a second and opposite conductivity type. A trench gate comprising a conductive material (109) separated from the upper layer (110) by an insulating layer is disposed in the upper layer of the substrate.