发明名称 |
Method for manufacturing a semiconductor thin film |
摘要 |
A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
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申请公布号 |
US2003092225(A1) |
申请公布日期 |
2003.05.15 |
申请号 |
US20020293156 |
申请日期 |
2002.11.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD., A JAPANESE CORPORATION |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;MIYANAGA AKIHARU;TERAMOTO SATOSHI |
分类号 |
H01L21/20;H01L21/336;(IPC1-7):H01L21/00;C30B1/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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