发明名称 |
Schottky barrier diode |
摘要 |
A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.
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申请公布号 |
US2003089959(A1) |
申请公布日期 |
2003.05.15 |
申请号 |
US20020205608 |
申请日期 |
2002.07.26 |
申请人 |
SANYO ELECTRIC COMPANY, LTD. |
发明人 |
ASANO TETSURO;ONADA KATSUAKI;NAKAJIMA YOSHIBUMI;MURAI SHIGEYUKI;TOMINAGA HISAAKI;HIRATA KOICHI;SAKAKIBARA MIKITO;ISHIHARA HIDETOSHI |
分类号 |
H01L21/329;H01L29/47;H01L29/872;(IPC1-7):H01L27/095 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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