| 摘要 |
An aging unit (DAC) for processing a wafer W having a coated film formed thereon includes a disposing plate, a temperature control circulating device for controlling the temperature of the disposing plate, a chamber, a gas supply mechanism for supplying an ammonia gas containing a water vapor into the chamber, an input section for inputting the processing time of the wafer W, and a control device for controlling the temperature of the disposing plate, the supply rate of the ammonia gas, and the amount of the water vapor contained in the ammonia gas so as to permit the processing of the wafer W to be finished in the processing time inputted into the input section.
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