INTEGRATED SEMICONDUCTOR COMPONENT FOR CONDUCTING HIGH-FREQUENCY MEASUREMENTS AND THE USE THEREOF

摘要

The invention relates to an integrated semiconductor component for conducting high-frequency measurements and to the use thereof. According to the invention, the semiconductor component is part of a semiconductor circuit (10) (SOI wafer), comprised of a first silicon layer (12), of a silicon oxide layer (insulating layer (14)) connected thereto, and of a subsequent additional silicon layer (structural layer (16)). The semiconductor component is comprised of an IMPATT oscillator (30) provided with a resonator (24), which contains a metallized silicon cylinder (18) mounted in the structural layer (16), a coupling disk (28) that covers the cylinder (18) in the area of the first layer (12), and an IMPATT diode (32) that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disk (28). The semiconductor component is also comprised of a reference oscillator (46) of a lower frequency provided with a resonator (24), which contains a metallized silicon cylinder (18) mounted in the structural layer (16), a coupling disk (28) that covers the cylinder in the area of the first layer (12), and a microwave conductor that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disk (28). The reference oscillator serves to stabilize the frequency of the IMPATT oscillator (30) via an active oscillator circuit (58). The semiconductor component additionally comprises a receive mixer provided with integrated Schottky diodes and comprises a transmitting/receiving antenna.