| 摘要 |
The invention concerns a method for making a semiconductor component using a dielectric coating (70<sb>1</sb>, , 70<sb>n</sb>) with several layers provided on or in a substrate (1). The invention is characterized in that after one of the layers (70<sb>1</sb>, , 70<sb>n</sb>) has been prepared, it consists in carrying out a plasma treatment, for example, plasma oxidation, and/or heat treatment.
|
