| 摘要 |
A method for producing a titanium material of a low oxygen content from a sponge titanium prepared by the kroll method, characterized in that a sponge titanium after separation under vacuum is cooled in a reaction vessel, a nitride film is then formed on the surface of the sponge titanium in the reaction vessel, and thereafter the sponge titanium is taken out of the reaction vessel and is cut or/and crushed. It is desirable that the formation of the nitride film is carried out through the introduction of a low oxygen content nitrogen gas having a ratio of partial pressure of nitrogen/partial pressure of oxygen of 20 or more to the reaction vessel, and that the nitrogen gas is introduced after the sponge titanium is so cooled as for the central portion thereof to have a temperature of 200ringC or lower. The method allows the production of a titanium material of a low oxygen content usable for a semiconductor target according to the Kroll method with a high production efficiency.
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