发明名称 |
THERMALLY BALANCED POWER TRANSISTOR |
摘要 |
A high power transistor structure comprised of a plurality of field effect transistors fabricated in parallel on a common semiconductor chip and wherein the gate electrodes of the field effect devices are in the form of parallel finger elements having a variable pitch between the fingers which decreases uniformly or non-uniformly from a central portion of the cell to opposite outer end portions thereof. |
申请公布号 |
WO03041169(A2) |
申请公布日期 |
2003.05.15 |
申请号 |
WO2002US35222 |
申请日期 |
2002.11.04 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
MORSE, ALFRED, W. |
分类号 |
H01L21/822;H01L21/338;H01L23/367;H01L27/04;H01L29/423;H01L29/812 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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