| 摘要 |
<p>In order to maintain a semiconductor device under test (14) at a generally constant temperature, the temperature change of the device under test (14) is characterized as the device under test (14) undergoes changes in power level in response to an electrical testing sequence. Additionally, the temperature change of the device under test (14) is characterized in response to changes in power level of a thermal head (30) associated with the device under test (14). This information is used to select power levels of the thermal head (30) during the electrical testing sequence so that the device under test (14) remains at a substantially constant temperature during the electrical testing sequence.</p> |
