| 摘要 |
A method for producing a semiconductor light emitting device, including at least one first column-like multi-layer structure provided on a substrate and containing gallium nitride-based semiconductor compound semiconductor layers represented by the general formula InxGayAlzN (where x+y+z=1, 0<=x<=1, 0<=y<=1, 0 <=z<=1), includes a first step of forming a plurality of grooves in the substrate; and a second step of forming a plurality of first column-like multi-layer structures on the substrate so as to be separated by the grooves.
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