发明名称 METHOD FOR FORMING A REGION OF LOW DIELECTRIC CONSTANT NANOPOROUS MATERIAL
摘要 A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of combining a plurality of materials to form a solution. In the present embodiment, the plurality of materials comprising a low dielectric constant material, a pore generator material, and a solvent. In this embodiment, the present method then applies the solution to a surface above which it is desired to form the region of low dielectric constant nanoporous material. Next, the present embodiment subjects the solution, which has been applied to the surface, to a thermal process such that a region of low dielectric constant nanoporous material is formed above the surface.
申请公布号 US2003092240(A1) 申请公布日期 2003.05.15
申请号 US20010012294 申请日期 2001.11.13
申请人 CHARTERED SEMICONDUCTORS MANUFACTURED LIMITED 发明人 KONG SIEW YONG;SEE ALEX;CHOOI SIMON;SARKAR GAUTAM
分类号 H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L21/336;H01L21/76 主分类号 H01L21/316
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