Thin film magnetic memory device for data read/write operation, has peripheral circuit each having two power supply line, which are arranged such that magnetic field generated by lines cancel each other in memory array

摘要

The system has a memory array (2) with cells, each having magnetic storage portion whose resistances can be varied according to a magnetization direction. Peripheral circuits (5a-5c) conducting data read and write operation on the array, has two-power supply line. The lines are arranged such that the magnetic field generated by the currents flowing through the lines cancels each other in the memory array.