发明名称 Light emitting apparatus and method for manufacturing the same
摘要 The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
申请公布号 US2003089991(A1) 申请公布日期 2003.05.15
申请号 US20020289261 申请日期 2002.11.07
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;MURAKAMI SATOSHI;SAKAKURA MASAYUKI;TAKAYAMA TORU
分类号 H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/56;(IPC1-7):H01L23/48 主分类号 H01L21/336
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