| 摘要 |
A semiconductor component contains two semiconductor bodies, which are spatially separated from one another and electrically interconnected. A compensation MOS field effect transistor is provided as the first semiconductor body, and a silicon carbide Schottky diode is provided as the second semiconductor body. Consequently, the semiconductor component can advantageously be produced significantly more compactly and more cost-effectively, since both the compensation MOS field-effect transistor and the silicon carbide Schottky diode contribute to a significant reduction of power loss.
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