Method and apparatus for producing bonded dielectric separation wafer

摘要

The present invention provides a method for producing a bonded dielectric separation wafer in which an auto-alignment can be carried out with reference to the orientation flat of a supporting substrate wafer after the wafer bonding step, and also an apparatus to be used for bonding wafers. When wafers are placed one upon another, the silicon wafers 10, 20 are irradiated with transmission light in order to capture the transmission images thereof. The positions of the pattern of dielectric isolation grooves 13 in the silicon wafer 10 and the orientation flat 20a of the silicon wafer 20 are determined from the images and the bonding position of the wafers 10, 20 is determined based on the determined positions. Auto-alignment of the bonded dielectric separation wafer can thereby be carried out with reference to the orientation flat 20a of the silicon wafer 20 after the wafer bonding step.