发明名称 ANTIFERROMAGNETICALLY COUPLED THIN FILMS FOR MAGNETIC RECORDING
摘要 The applicants disclose an antiferromagnetically coupled layer structure for magnetic recording wherein the top ferromagnetic structure is a bilayer structure including a relatively thin first sublayer of ferromagnetic material in contact with the coupling/spacer layer. The first sublayer has a higher magnetic moment than the second sublayer. The layer structure of the invention results improved manufacturability and improved performance. A preferred embodiment of a layer structure according to the invention includes: a bottom ferromagnetic layer preferably of CoCr; an antiferromagnetic coupling/spacer layer preferably of Ru; and a top ferromagnetic structure including a thin first sublayer of material preferably of CoCr, CoCrB or CoPtCrB, and a thicker second sublayer of material preferably of CoPtCrB with a lower moment than the first sublayer.
申请公布号 US2003090831(A1) 申请公布日期 2003.05.15
申请号 US20010010785 申请日期 2001.11.09
申请人 DOERNER MARY FRANCES;FULLERTON ERIC E.;MARGULIES DAVID THOMAS T.;TANG KAI 发明人 DOERNER MARY FRANCES;FULLERTON ERIC E.;MARGULIES DAVID THOMAS T.;TANG KAI
分类号 G11B5/00;G11B5/012;G11B5/66;G11B5/73;H01F10/32;(IPC1-7):G11B5/012 主分类号 G11B5/00
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