| 发明名称 |
A SCALABLE FLASH EEPROM MEMORY CELL WITH FLOATING GATE SPACER WRAPPED BY CONTROL GATE, AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A flash EEPROM cell having a semiconductor substrate with a drain and source and channel there between. A select gate (14) is positioned over a portion of the channel and is insulated therefrom. A floating gate (26) spacer having a bottom surface positioned over a second portion of the channel and is insulated therefrom. A control gate (32) is over the floating gate (26) and insulated therefrom. |
| 申请公布号 |
WO03041176(A2) |
申请公布日期 |
2003.05.15 |
| 申请号 |
WO2002US33612 |
申请日期 |
2002.10.17 |
| 申请人 |
INTEGRATED MEMORY TECHNOLOGIES, INC. |
发明人 |
JENQ, CHING-SHI;WANG, CHING DONG |
| 分类号 |
H01L21/336;H01L21/8247;H01L29/423;H01L29/788 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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