Semiconductor device used in integrated circuits comprises a substrate with a first conductor strip, an insulating layer on the first strip, and a second conductor strip on the insulating layer

摘要

Semiconductor device comprises a substrate (1) with a first conductor strip (3), an insulating layer (4) on the first strip, and a second conductor strip (9) on the insulating layer. A voltage can be applied between the two strips. The insulating layer is deposited in a thickness of 2-10 nm using a PECVD process so that a short circuit is produced between the two strips when a higher voltage than the normal operating voltage is applied and a permanent electrical connection is formed between the conductor strips. An Independent claim is also included for a process for the production of the semiconductor device. Preferred Features: The insulating layer is 2-4 nm thick and is made from oxidized silicon nitride or oxidized amorphous silicon. The higher voltage is 3-10 V.