A method for forming a fine pattern characterized by comprising a step for coating a substrate having a photoresist pattern with an agent for forming a fine pattern coating, a step for decreasing the intervals of the photoresist patterns by thermally shrinking the agent for forming a fine pattern coating through heat treatment, and a step for removing the agent for forming a fine pattern coating, the above steps being repeated a plurality of times. According to the inventive method for forming a fine pattern, a fine pattern having a good profile can be obtained even when a substrate having a thick-film photoresist patterns about 1.0 mum thick or above is employed while exhibiting excellent controllability of pattern dimensions and satisfying the characteristics required by a semiconductor device.
申请公布号
WO03040831(A1)
申请公布日期
2003.05.15
申请号
WO2002JP11497
申请日期
2002.11.05
申请人
TOKYO OHKA KOGYO CO., LTD.;SHINBORI, HIROSHI;SUGETA, YOSHIKI;KANEKO, FUMITAKE;TACHIKAWA, TOSHIKAZU