发明名称 METHOD FOR FORMING FINE PATTERN
摘要 A method for forming a fine pattern characterized by comprising a step for coating a substrate having a photoresist pattern with an agent for forming a fine pattern coating, a step for decreasing the intervals of the photoresist patterns by thermally shrinking the agent for forming a fine pattern coating through heat treatment, and a step for removing the agent for forming a fine pattern coating, the above steps being repeated a plurality of times. According to the inventive method for forming a fine pattern, a fine pattern having a good profile can be obtained even when a substrate having a thick-film photoresist patterns about 1.0 mum thick or above is employed while exhibiting excellent controllability of pattern dimensions and satisfying the characteristics required by a semiconductor device.
申请公布号 WO03040831(A1) 申请公布日期 2003.05.15
申请号 WO2002JP11497 申请日期 2002.11.05
申请人 TOKYO OHKA KOGYO CO., LTD.;SHINBORI, HIROSHI;SUGETA, YOSHIKI;KANEKO, FUMITAKE;TACHIKAWA, TOSHIKAZU 发明人 SHINBORI, HIROSHI;SUGETA, YOSHIKI;KANEKO, FUMITAKE;TACHIKAWA, TOSHIKAZU
分类号 G03F7/00;G03F7/40;H01L21/027;(IPC1-7):G03F7/40 主分类号 G03F7/00
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