Power semiconductor device e.g. power MOSFET has channel stop structure formed in peripheral portion of semiconductor substrate with trench formed in main surface of substrate

摘要

A transistor has a P-type impurity implantation region (4) which is formed in a main surface (3) of an N-type semiconductor substrate (1) and which constitutes a main structure with the substrate. A channel stop structure formed in a peripheral portion of the substrate, has a trench (5) formed in the main surface of the semiconductor substrate. An Independent claim is also included for power metal oxide semiconductor field effect transistor manufacture method.