发明名称 |
Flash memory cell and method to achieve multiple bits per cell |
摘要 |
A method of flash memory cell programming is provided which uses a uniform electric potential across tunnel oxide. The tight Vt distribution and very stable Vt shift over program/erase cycling allows for a multi-level cell capable of having more than 2 bits per cell.
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申请公布号 |
US2003092236(A1) |
申请公布日期 |
2003.05.15 |
申请号 |
US20010772220 |
申请日期 |
2001.01.29 |
申请人 |
SHUM DANNY;TEMPEL GEORG;LUDWIG C. |
发明人 |
SHUM DANNY;TEMPEL GEORG;LUDWIG C. |
分类号 |
G11C11/56;G11C16/04;G11C16/34;(IPC1-7):H01L21/336 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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