发明名称 |
Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
摘要 |
A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
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申请公布号 |
US2003091739(A1) |
申请公布日期 |
2003.05.15 |
申请号 |
US20020277733 |
申请日期 |
2002.10.23 |
申请人 |
SAKAMOTO HITOSHI;YAHATA NAOKI;MATSUDA RYUICHI;OOBA YOSHIYUKI;NISHIMORI TOSHIHIKO |
发明人 |
SAKAMOTO HITOSHI;YAHATA NAOKI;MATSUDA RYUICHI;OOBA YOSHIYUKI;NISHIMORI TOSHIHIKO |
分类号 |
H01L21/28;C23C8/36;C23C16/34;C23C16/448;C23C16/452;C23C16/507;C23C16/56;C23C28/00;C23C30/00;H01L21/768;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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