发明名称 CATHODE FABRICATION
摘要 This writing provides a method of fabricating a cathode requiring relatively few and somewhat simple steps. One embodiment provides a method of fabricating a cathode in which the passivation layer and the metallic gate chromium are masked and patterned simultaneously. The method effectuates patterning of the passivation layer as necessary and simultaneously fixed a location for both access spots and inter-pixel electrical isolation areas to chromium constituting the metallic gate. Importantly, the present implementation effectively eliminates a conventionally requisite subsequent metallic gate chromium masking and etching step.
申请公布号 WO03041108(A2) 申请公布日期 2003.05.15
申请号 WO2002US30619 申请日期 2002.09.25
申请人 CANDESCENT INTELLECTUAL PROPERTY SERVICES, INC.;SONY CORPORATION 发明人 LEE, JUENG-GIL;KEMMOTSU, HIDENORI
分类号 H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址