SEMICONDUCTOR DEVICE HAVING TRENCH ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having trench isolation structure and a manufacturing method thereof are provided to prevent the stress induced defect of a silicon layer by forming a trench having a shallow and deep trench. CONSTITUTION: An SOI(Silicon On Insulator) substrate composed of a base substrate(200), a buried insulator layer(202) and an upper silicon layer(204), is provided with a trench region(214) located at the predetermined portion of the same and an isolation structure(228) for filling in the trench region(214). At this time, trench region(214) further includes a deep trench region(214d) formed through the upper silicon layer(204) to the upper surface of the buried insulator layer(202), and a shallow trench region(214s) formed at the peripheral portion of the deep trench region(214d). The isolation structure(228) further comprises a trench oxide layer(216), a trench liner(218a) and an isolating layer pattern(224p) for filling in the trench region(214).