| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for plasma film deposition in which the difference in the filling property of a recessed part can be reduced between a recessed part in a center of a workpiece and a recessed part in a peripheral part thereof. SOLUTION: A plasma film deposition apparatus (1) comprises a treatment chamber (2), a pedestal (7), a closing member (10), a coil (12 or 17), and a first AC power source (14t or 14s). The pedestal (7) has an arrangement part and a peripheral part. The arrangement part is provided so as to arrange the workpiece (W). The peripheral part is provided so as to surround the arrangement part. The closing member (10) surrounds the arrangement part arranged on the peripheral part. The treatment chamber (2) stores the pedestal (7). The coil (12 or 17) is arranged on the outer periphery of the treatment chamber (2), and can be used to generate plasma of process gas to feed a raw material for the film to be deposited.
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