METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To make accurately measurable the size of a resist pattern by irradiating the resist pattern with electron beams. SOLUTION: After a test resist film consisting of a chemically amplifying resist material is formed, the test resist film is subjected to pattern exposure and developing to form a test resist pattern 14A. After a water-soluble film 15 is formed on the surface of the test resist pattern 14A, the size of the test resist pattern 14A is measured by using electron beams 16.