SEED CRYSTAL FOR GROWING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT AND METHOD OF PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a large diameter silicon carbide single crystal ingot with low defect concentration, and to provide a method of producing the same. SOLUTION: When a silicon carbide single crystal is grown by a sublimation recrystallization method using a seed crystal, a high quality silicon carbide single crystal ingot is obtained by controlling the thickness of the seed crystal to be >=0.6 and <=3.0 mm.