| 摘要 |
PURPOSE: An InGaNAs compound semiconductor thin film and a method for growth thereof are provided to prevent the desorption of nitrogen atoms by effectively adding the nitrogen atoms supplied from a metal organic compound containing Ga-N to the InGaNAs thin film. CONSTITUTION: An InGaNAs thin film(8) is deposited on a lower DBR(Distributed Bragg Reflector)(7) of a compound semiconductor device by using a plurality of precursors. At this time, at least one of the precursors is a metal organic compound containing molecule-type Ga-N. At this time, nitrogen atoms supplied through the metal organic compound having the molecule-type Ga-N are distributed in the InGaNAs thin film(8) with the predetermined concentration, wherein the molecule-type Ga-N has a strong cohesion, thereby protecting the desorption of the nitrogen atoms.
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