METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To reduce the size of an opening composed of a hole or a groove formed in a resist pattern without deteriorating the profile of the opening. SOLUTION: A resist film 11 is formed from a chemically amplifying resist material containing a base polymer having a protective group which desorbs by the effect of an acid, an acrylic compound and an acid generating agent which generates an acid when irradiated with light. The resist film 11 is irradiated with exposure light 12 through a mask 13 for pattern exposure. The resist film 11 subjected to the pattern exposure is developed to form a resist pattern 16 having openings 15 composed of holes or grooves. The size of the openings 15 is reduced by irradiating the resist pattern 16 with light while heating.