METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To decrease the exposure energy of extreme UV rays or electron beams for irradiating a resist film consisting of a chemically amplifying resist material. SOLUTION: A resist film 11 consisting of a chemically amplifying resist material containing a phenol polymer, an acryl polymer and an onium salt as an acid generating agent is formed. The resist film 11 is selectively irradiated with extreme UV rays 12 for pattern exposure. The resist film 11 after the pattern exposure is developed to form a resist pattern 13.