发明名称 METHOD FOR MANUFACTURING HIGH-PURITY VANADIUM, HIGH- PURITY VANADIUM, SPUTTERING TARGET COMPOSED OF THE HIGH- PURITY VANADIUM, AND THIN FILM DEPOSITED USING THE SPUTTERING TARGET
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing high-purity vanadium from vanadium raw material (vanadium oxide) containing iron, aluminum, silicon, carbon, oxygen, etc., in large quantities and to provide a technology for efficiently manufacturing high-purity vanadium of >=4 N (99.99 wt.%) purity from the raw material. SOLUTION: The high-purity vanadium can be manufactured by: subjecting crude vanadium raw material composed of vanadium oxide to acid leaching to prepare vanadium solution; adding alkaline solution to it to carry out pH adjustment; adding ammonium chloride to precipitate high-purity ammonium vanadate; roasting the resultant high-purity ammonium vanadate precipitate to obtain high-purity vanadium oxide; and reducing the high-purity vanadium oxide to form the high-purity vanadium.</p>
申请公布号 JP2003138326(A) 申请公布日期 2003.05.14
申请号 JP20010333644 申请日期 2001.10.31
申请人 NIKKO MATERIALS CO LTD 发明人 SHINDO YUICHIRO
分类号 C22B34/22;C22B3/44;C22B5/04;C22B9/04;C23C14/14;C23C14/34;(IPC1-7):C22B34/22 主分类号 C22B34/22
代理机构 代理人
主权项
地址