| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for correcting the pattern of a phase inversion mask and to provide a phase inversion mask manufactured by using the method. SOLUTION: First, a phase inversion mask having a pattern regularly and repeatedly formed on a mask main body made of a planar transparent material is measured for the error in the pattern to recognize a corrected pattern. In order to correct the pattern error, the mask plate face is etched to specified depth to form a recessed part according to the corrected pattern in the position adjacent to the pattern. Then a phase inversion substance is vapor deposited to a specified thickness in the recessed part to induce the complete phase inversion. Therefore, when the pattern is to be corrected on the phase inversion mask, the complete corrected pattern is obtained by etching the mask plate face to form a recessed part in the position where the corrected pattern is to be formed and then subjecting the recessed part to the vapor deposition of the phase inversion substance. Thus, the reliability of photo processes can be enhanced.</p> |
