| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition in which the change rate of the line width due to changes in resist film thickness on a highly reflective substrate having a rough surface (such as a bare silicon substrate, polysilicon substrate) is significantly suppressed. SOLUTION: The positive resist composition is characterized in containing (A) a resin which has a structural unit containing an acid-decomposing group having a specified structure and which is decomposed by the effect of an acid to increase the solubility with an alkali developing solution and/or (B) a resin which has a structural unit containing an acid-decomposing group having another specified structure and which is decomposed by the effect of an acid to increase the solubility with an alkali developing solution, (C) a resin which has a structural unit containing an acid-decomposing group having another specified structure and which is decomposed by the effect of an acid to increase the solubility with an alkali developing solution, and a compound which generates an acid by irradiation of active rays or radiation. |
